| PART |
Description |
Maker |
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C4004C KM416C4104C KM416C4004CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C256D KM416V256D |
256K X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
Samsung semiconductor
|
| K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16 EDO DRAM, 50 ns, PDSO50
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MB81V4265-70 |
CMOS 256K ×16BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM48V8100B |
8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8浣?CMOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GM72V661641D GM72V661641DI GM72V661641DLI |
1,048,576WORD X 16BIT X 4BANK SYNCHRONOUS DYNAMIC RAM 1,048,576字16Bit的X 4BANK同步动态RAM
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
